Organic light emitting display devices

ABSTRACT

An organic light emitting display device may have a pixel region and a transparent region, and may include a substrate, at least one semiconductor device disposed on the substrate in the pixel region, an organic light emitting structure disposed on the at least one semiconductor device, and a capacitor disposed on the substrate in the transparent region. The capacitor may have a sufficient capacitance without substantially reducing a transmittance of the organic light emitting display device. Additionally, the transparent region of the organic light emitting display device may serve as a mirror in accordance with the material included in a lower electrode of the capacitor and/or an upper electrode of the capacitor.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority under 35 U.S.C. §119 to Korean patentApplication No. 10-2014-0083590, filed on Jul. 4, 2014, the disclosureof which is hereby incorporated by reference herein in its entirety.

BACKGROUND

1. Technical Field

Exemplary embodiments of the inventive concept relate to organic lightemitting display devices. More particularly, exemplary embodiments ofthe inventive concept relate to organic light emitting display devicesincluding capacitors disposed on transparent regions, and method ofmanufacturing the organic light emitting display devices.

2. Description of the Related Art

An organic light emitting display (OLED) device may display variousinformation such as images or characters by combining electrons providedfrom a cathode with holes provided from anode in an organic lightemitting layer. The organic light emitting display device has beenexpected as one of promising next generation display devices because theorganic light emitting display device has some advantages, for example,a wide view angle, a rapid response speed, a thin thickness, a low powerconsumption, etc.

Recently, a transparent organic light emitting display device has beenrapidly developed. In the transparent organic light emitting displaydevice, an image of an object in the front or the back of a transparentregion of the organic light emitting display device may be recognizedwhen the organic light emitting display device is in an “ON” state. Inan “OFF” state of the organic light emitting display device, an imagemay be displayed in a pixel region of the organic light emitting displaydevice using light generated from an organic light emitting layer.

Generally, the transparent organic light emitting display deviceincludes a substrate having a pixel region in which pixels are arrangedand a transparent region adjacent to the pixel region, semiconductordevices disposed in the pixel region, a capacitor disposed in the pixelregion, peripheral circuits, etc. In the conventional transparentorganic light emitting display device, the semiconductor devices and thecapacitor are positioned in the pixel region. Here, the capacitor maynot have enough area to provide a sufficient capacitance for otherelements of the organic light emitting display device.

SUMMARY

Exemplary embodiments provide an organic light emitting display deviceincluding a capacitor of a sufficient capacitance disposed in atransparent region without reducing a transmittance of the organic lightemitting display device.

According to aspects of the inventive concept, there is provided anorganic light emitting display device having a pixel region and atransparent region. The organic light emitting display device mayinclude a substrate, at least one semiconductor device disposed on thesubstrate in the pixel region, an organic light emitting structuredisposed on the at least one semiconductor device, and a capacitordisposed on the substrate in the transparent region.

In exemplary embodiments, the at least one semiconductor device mayinclude a first semiconductor device. The first semiconductor device mayinclude a first active pattern disposed on the substrate, a first gateinsulation layer disposed on the first active pattern, a first gateelectrode disposed on the first gate insulation layer, a first sourceelectrode contacting a first portion of the first active pattern andhaving an extended portion extending into the transparent region, and afirst drain electrode contacting a second portion of the first activepattern. Further, the capacitor may include a lower electrode contactingthe extended portion of the first source electrode, a dielectricstructure disposed on the lower electrode, and an upper electrodedisposed on the dielectric structure. For example, each of the lowerelectrode and the upper electrode may include a material having atransmittance or a material having a reflectivity.

In exemplary embodiments, the lower electrode and the first gateelectrode are disposed on a same plane and formed of a same material.Additionally, the dielectric structure may include a first insulatinginterlayer disposed on the first gate electrode and the lower electrode,and a second insulating interlayer disposed on the first insulatinginterlayer.

In exemplary embodiments, the organic light emitting display device mayadditionally include an insulation layer disposed on the capacitor andthe at least one semiconductor device. Here, the organic light emittingstructure may be positioned on the insulation layer.

In exemplary embodiments, the insulation layer may have an openingexposing the dielectric structure in the transparent region, and acontact hole exposing the extended portion of the first source electrodein the pixel region. The upper electrode may be disposed on thedielectric structure exposed by the opening, the insulation layer and asidewall of the opening. Further, the organic light emitting structuremay include a first electrode contacting the exposed portion of thefirst source electrode through the contact hole, an organic lightemitting layer disposed on the first electrode, and a second electrodedisposed on the organic light emitting layer. 11. Alternatively, theupper electrode may be integrally formed with the first electrode. 12.

In some exemplary embodiments, the insulation layer may have an openingexposing the exposed portion of the first source electrode and thedielectric structure. The upper electrode may be positioned on theinsulation layer, one sidewall of the opening and the dielectricstructure exposed by the opening. Further, the organic light emittingstructure may include a first electrode disposed on the insulationlayer, another sidewall of the opening and the exposed portion of thefirst source electrode, an organic light emitting layer disposed on thefirst electrode, and a second electrode disposed on the organic lightemitting layer.

In exemplary embodiments, the at least one semiconductor device mayinclude a second semiconductor device. The second semiconductor devicemay include a second active pattern disposed on the substrate, the firstgate insulation layer disposed on the second active pattern, a secondgate electrode disposed in the first gate insulation layer, a secondsource electrode contacting a first portion of the second activepattern, and a second drain electrode contacting a second portion of thesecond active pattern. The second gate electrode and the lower electrodemay be positioned respectively at different levels over the substrate.

In exemplary embodiments, the organic light emitting display device mayadditionally include an additional capacitor disposed in the pixelregion. For example, the additional capacitor may be disposed on thefirst semiconductor device. The additional capacitor may include a lowerelectrode being the first gate electrode, a dielectric structuredisposed on the first gate electrode, and an upper electrode disposed onthe dielectric structure. Here, the dielectric structure of theadditional capacitor may include a portion of an insulating interlayerdisposed on the first gate electrode.

In exemplary embodiments, the capacitor may include a lower electrode, adielectric structure disposed on the lower electrode, and an upperelectrode disposed on the dielectric structure and contacting theextended portion of the first source electrode. The upper electrode maybe formed using the same material as that of an electrode of the organiclight emitting structure. The organic light emitting display device mayfurther include an additional capacitor disposed in the pixel region.The additional capacitor may be disposed on the first semiconductordevice. The additional capacitor may include a lower electrode being thefirst gate electrode, a dielectric structure disposed on the first gateelectrode, and an upper electrode disposed on the dielectric structure.The dielectric structure of the additional capacitor may include aninsulating interlayer disposed on the first gate electrode,

According to exemplary embodiments of the inventive concept, the organiclight emitting display device may include the capacitor disposed in thetransparent region of the organic light emitting display device withoutincreasing an area of the pixel region. Thus, the capacitor may have asufficient capacitance for elements of the organic light emittingdisplay device while a transmittance of the organic light emittingdisplay device may not substantially reduced. Further, the transparentregion of the organic light emitting display device may function as amirror in accordance when the lower electrode of the capacitor and/orthe upper electrode of the capacitor may include the material having thereflectivity. Moreover, the organic light emitting display device mayinclude the additional capacitor disposed in the pixel region, so theorganic light emitting display device may have ensure a more sufficientcapacitance for the element thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative, non-limiting exemplary embodiments will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings.

FIG. 1 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with exemplary embodiments.

FIG. 2 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments.

FIG. 3 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments.

FIGS. 4, 5, 6, 7, 8, 9, 10, and 11 are cross sectional viewsillustrating a method of manufacturing an organic light emitting displaydevice in accordance with exemplary embodiments.

FIG. 12 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments.

FIG. 13 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments.

FIG. 14 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments.

FIGS. 15, 16, 17, 18, 19, 20, and 21 are cross sectional viewsillustrating a method of manufacturing an organic light emitting displaydevice in accordance with exemplary embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, organic light emitting display devices and methods ofmanufacturing organic light emitting display devices in accordance withexemplary embodiments will be described in detail with reference to theaccompanying drawings.

FIG. 1 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with exemplary embodiments.

Referring to FIG. 1, an organic light emitting display device 100includes a substrate 105, a first semiconductor device, a secondsemiconductor device, a capacitor CAP, an organic light emittingstructure, etc. In exemplary embodiments, the organic light emittingdisplay device 100 may have a pixel region and a transparent region. Thefirst and the second semiconductor devices and the organic lightemitting structure may be disposed in the pixel region, while thecapacitor CAP may be located in the transparent region of the organiclight emitting display device 100. For example, an image may bedisplayed using the organic light emitting structure located in thepixel region of the organic light emitting display device 100, and animage of an object positioned in the front and/or the back of thetransparent region of the organic light emitting display device 100 maybe recognized. In exemplary embodiments, the capacitor CAP located inthe transparent region may include a lower electrode 140 b, a dielectricstructure and an upper electrode 170 b.

The substrate 105 may include a transparent insulation material. Forexample, the substrate 105 may include a glass substrate, a quartzsubstrate, a transparent resin substrate, etc. Examples of thetransparent resin substrate may include polyimide-based resin,acryl-based resin, polyacrylate-based resin, polycarbonate-based resin,polyether-based resin, sulfonic acid-based resin, polyethyleneterephthalate-based resin, etc. The substrate 105 may also have thepixel region and the transparent region in accordance with the organiclight emitting display device 100.

A first buffer layer 110 and a second buffer layer 115 may be disposedon the substrate 105. The first and the second buffer layers 110 and 115may prevent the diffusion of metal atoms and/or impurities from thesubstrate 105. Additionally, the first and the second buffer layers 110and 115 may control the rate of the heat transfer in the crystallizationprocess for forming a first active pattern 120 a and a second activepattern 120 b, thereby obtaining substantially uniform the first and thesecond active patterns 120 a and 120 b. Furthermore, the first and thesecond buffer layers 110 and 115 may improve the surface flatness of thesubstrate 105 when the surface of the substrate 105 may be relativelyirregular. For example, each of the first and the second buffer layers110 and 115 may include silicon nitride, silicon oxide, etc. In someexemplary embodiments, only one buffer layer or no buffer layer may beprovided on the substrate 105 in accordance with the type of thesubstrate 105.

The first semiconductor device may be disposed on the second bufferlayer 115. In exemplary embodiments, the first semiconductor device mayinclude a first active pattern 120 a, a first gate insulation layer 125,a second gate insulation layer 135, a first gate electrode 140 a, afirst source electrode 155 a, and a first drain electrode 160 a. A firstinsulating interlayer 145 and a second insulating interlayer 150 may bedisposed between the first gate electrode 140 a and the firstsource/drain electrode 155 a/160 a. For example, the first semiconductordevice may serve as a driving transistor of the organic light emittingdisplay device 100.

The second semiconductor device may also be disposed on the secondbuffer layer 115. The second semiconductor device may include a secondactive pattern 120 b, the first gate insulation layer 125, a second gateelectrode 130, a second source electrode 155 b, and a second drainelectrode 160 b. The second gate insulation layer 135, the firstinsulating interlayer 145 and the second insulating interlayer 150 maybe interposed between the second gate electrode 130 and the secondsource/drain electrode 155 b/160 b. For example, the secondsemiconductor device may function as a switching transistor of theorganic light emitting display device 100.

According to exemplary embodiments, the first and the secondsemiconductor devices may be disposed in the pixel region. In thesesemiconductor devices, the first active pattern 120 a may be spacedapart from the second active pattern 120 b. That is, the first and thesecond active patterns 120 a and 120 b may be separately located on thesecond buffer layer 115. For example, each of the first and the secondactive patterns 120 a and 120 b may include a material containingsilicon. Alternatively, the first and the second active patterns 120 aand 120 b may include oxide semiconductors, respectively. The first gateinsulation layer 125 may be disposed on the second buffer layer 115 tocover the first and the second active patterns 120 a and 120 b. Thefirst gate insulation layer 125 may include silicon oxide, metal oxide,etc.

The second gate electrode 130 may be positioned on a portion of thefirst gate insulation layer 125 under which the second active pattern120 b is located. The second gate electrode 130 may include metal,alloy, metal nitride, conductive metal oxide, transparent conductivematerial, etc. The second gate insulation layer 135 may be disposed onthe first gate insulation layer 125 to cover the second gate electrode130. The second gate insulation layer 135 may include silicon nitride,silicon oxide, metal nitride, etc.

The first gate electrode 140 a is disposed on the second gate insulationlayer 135. The first gate electrode 140 a may include metal, alloy,metal nitride, conductive metal oxide, transparent conductive material,etc. For example, the first gate electrode 140 a may include aluminum(Al), alloy containing aluminum, aluminum nitride (AlNx), silver (Ag),alloy containing silver, tungsten (W), tungsten nitride (WNx), copper(Cu), alloy containing copper, nickel (Ni), chromium (Cr), molybdenum(Mo), alloy containing molybdenum, titanium (Ti), titanium nitride(TiNx), platinum (Pt), tantalum (Ta), tantalum nitride (TaNx), zincoxide (ZOx), indium tin oxide (ITO), tin oxide (SnOx), indium oxide(InOx), gallium oxide (GaOx), indium zinc oxide (IZO), etc. The firstand the second gate insulation layers 125 and 135 may be interposedbetween the first active pattern 120 a and the first gate electrode 140a, while the first gate insulation layer 125 may be interposed betweenthe second active pattern 120 b and the second gate electrode 130. Inexemplary embodiments, the first gate electrode 140 a may be positionedat a level different from that of the second gate electrode 130. Thatis, the first and the second gate electrodes 140 a and 130 may belocated respectively at different levels over the substrate 105.

As illustrated in FIG. 1, the first and the second gate electrodes 140 aand 130 may be positioned in the pixel region, and the lower electrode140 b of the capacitor CAP may be located in the transparent region.Thus, the lower electrode 140 b is spaced apart from the first gateelectrode 140 a on the second gate insulation layer 135. In exemplaryembodiments, the lower electrode 140 b may include a materialsubstantially the same as that of the first gate electrode 140 a. Forexample, each of the first gate electrode 140 a and the lower electrode140 b may include a material having a transmittance. Examples of thematerial having the transmittance may include indium tin oxide, indiumzinc oxide, zinc oxide, tin oxide, gallium oxide, indium oxide, etc.Alternatively, the first gate electrode 140 a may include a materialdifferent from that of the lower electrode 140 b. When the lowerelectrode 140 b include the above material having the transmittance, thetransmittance of the organic light emitting display device 100 may notbe reduced even though the capacitor CAP is positioned in thetransparent region.

In some exemplary embodiments, the lower electrode 140 b may include amaterial having a reflectivity or a semi-transparent material. Forexample, the lower electrode 140 b may include aluminum, alloycontaining aluminum, aluminum nitride, silver, alloy containing silver,tungsten, tungsten nitride, copper, alloy containing copper, nickel,chromium, molybdenum, alloy containing molybdenum, titanium, titaniumnitride, platinum, tantalum, tantalum nitride, etc. When the lowerelectrode 140 b of the capacitor CAP includes the material having thereflectivity or the semi-transparent material, the transparent region ofthe organic light emitting display device 100 may substantially functionas a mirror.

Referring now to FIG. 1, the first insulating interlayer 145 may bedisposed on the second gate insulation layer 135 to cover the first gateelectrode 140 a and the lower electrode 140 b. The first insulatinginterlayer 145 may electrically insulate the first gate electrode 140 afrom the first source and drain electrodes 155 a and 160 a in the pixelregion. In the transparent region, the first insulating interlayer 145may compose the dielectric structure of the capacitor CAP. For example,the first insulating interlayer 145 may include silicon compound such assilicon oxide, silicon nitride, silicon oxy-nitride, silicon carbonnitride, silicon oxy-carbide, etc.

The second insulating interlayer 150 may be disposed on the firstinsulating interlayer 145. In the pixel region, the first and the secondinsulating interlayers 145 and 150 may electrically insulate the firstgate electrode 140 a from the first source and drain electrodes 155 aand 160 a, and also may electrically insulate the second gate electrode130 from the second source and drain electrodes 155 b and 160 b. In thetransparent region, the first insulating interlayer 145 and the secondinsulating layer may compose the dielectric structure of the capacitorCAP. That is, the dielectric structure of the capacitor CAP may includethe first and the second insulating interlayers 145 and 150. Forexample, the second insulating interlayer 150 may include siliconcompound such as silicon oxide, silicon nitride, silicon oxy-nitride,silicon carbon nitride, silicon oxy-carbide, etc.

As illustrated in FIG. 1, the first source electrode 155 a and the firstdrain electrode 160 a may contact a first source region and a firstdrain region of the first active pattern 120 a via the second insulatinginterlayer 150, the first insulating interlayer 145, the second gateinsulation layer 135 and the first gate insulation layer 125,respectively. Additionally, the second source electrode 155 b and thesecond drain electrode 160 b may contact a second source region and asecond drain region of the second active pattern 120 b via the secondinsulating interlayer 150, the first insulating interlayer 145, thesecond gate insulation layer 135 and the first gate insulation layer125, and then may contact a second source region and a second drainregion of the second active pattern 120 b, respectively.

According to exemplary embodiments, the first source electrode 155 a mayextend into the transparent region, and may contact the lower electrode140 b of the capacitor CAP. For example, a first contact hole 152exposing the lower electrode 140 b may be provided through the first andthe second insulating interlayers 145 and 150, and the first sourceelectrode 155 a may extend onto the lower electrode 140 b through thefirst contact hole 152.

Each of the first and the second source electrodes 155 a and 155 b mayinclude metal, alloy, metal nitride, conductive metal oxide, transparentconductive material, etc. Further, each of the first and the seconddrain electrodes 160 a and 160 b may include metal, alloy, metalnitride, conductive metal oxide, transparent conductive material, etc.For example, each of the first and the second source electrodes 155 aand 155 b and the first and the second drain electrodes 160 a and 160 bmay include aluminum, alloy containing aluminum, aluminum nitride,silver, alloy containing silver, tungsten, tungsten nitride, copper,alloy containing copper, nickel, chromium, molybdenum, alloy containingmolybdenum, titanium, titanium nitride, platinum, tantalum, tantalumnitride, zinc oxide, indium tin oxide, tin oxide, indium oxide, galliumoxide, indium zinc oxide, etc.

In exemplary embodiments, the first gate electrode 140 a of the firstsemiconductor device may be positioned at a level substantially the sameas that of the lower electrode 140 b of the capacitor CAP. In contrast,the second gate electrode 130 of the second semiconductor device may belocated at a level substantially lower than the level of the first gateelectrode 140 a. As described above, the capacitor CAP may include thelower electrode 140 b, the dielectric structure having the portions ofthe first and the second insulating interlayers 145 and 150, and theupper electrode 170 b. The upper electrode 170 b of the capacitor CAPwill be described below.

The insulation layer 165 may be disposed on the second insulatinginterlayer 150 to cover the first and the second source electrodes 155 aand 155 b and the first and the second drain electrodes 160 a and 160 b.In exemplary embodiments, the insulation layer 165 may cover the firstand the second semiconductor devices in the pixel region, and may extendinto the transparent region. A second contact hole 167 may be providedthrough a portion of the insulation layer 165 adjacent to a boundarybetween the pixel region and the transparent region. The second contacthole 167 may expose an extended portion of the first source electrode155 a near the boundary between the pixel region and the transparentregion. An opening 169 may be provided through the insulation layer 165to expose the second insulating interlayer 150 in the transparentregion. For example, the opening 169 may be spaced apart from the secondcontact hole 167. The first contact hole 152 may be disposed between theopening 169 and the second contact hole 167 in a plan view. Theinsulation layer 165 may include an organic material. For example, theinsulation layer 165 may include photoresist, acryl-based resin,polyimide-based resin, polyamide-based resin, siloxane-based resin, etc.Alternatively, the insulation layer 165 may include an inorganicmaterial such as silicon compound, metal, metal oxide, etc.

Referring now to FIG. 1, the first electrode 170 a and the upperelectrode 170 b may be disposed on the insulation layer 163 and anexposed portion of the second insulating interlayer 150. In the pixelregion, the first electrode 170 a may extend from the insulation layer162 into the second contact hole 167 to thereby contact the exposedportion of the first source electrode 155 a. In the transparent region,the upper electrode 170 b may extend from the insulation layer 165 intothe opening 169 so that the upper electrode 170 b may be positioned onthe exposed second insulating interlayer 150.

Each of the first electrode 170 a and the upper electrode 170 b mayinclude a material having a transmittance. For example, the firstelectrode 170 a and the upper electrode 170 b may include indium tinoxide, indium zinc oxide, zinc oxide, tin oxide, gallium oxide, indiumoxide, etc. When the upper electrode 170 b of the capacitor CAP includesthe material having the transmittance, the transmittance of the organiclight emitting display device 100 may not be decreased in thetransparent region.

In some exemplary embodiments, each of the first electrode 170 a and theupper electrode 170 b may include a material having a reflectivity. Forexample, the first electrode 170 a and the upper electrode 170 b mayinclude metal, alloy, metal nitride, etc. Examples of the materialhaving the reflectivity may include aluminum, alloy containing aluminum,aluminum nitride, silver, alloy containing silver, tungsten, tungstennitride, copper, alloy containing copper, nickel, chromium, molybdenum,alloy containing molybdenum, titanium, titanium nitride, platinum,tantalum, tantalum nitride, etc. In case that the upper electrode 1670 bof the capacitor CAP includes the material having the reflectivity, thetransparent region of the organic light emitting display device 100 maysubstantially serve as a mirror.

A pixel defining layer 175 may be disposed on the first electrode 170 a,the upper electrode 170 b and the insulation layer 162. The pixeldefining layer 175 may include an organic material or an inorganicmaterial. For example, the pixel defining layer 175 may includephotoresist, polyamide-based resin, polyimide-based resin, acryl-basedresin, silicon compound, etc. In the pixel region, a pixel opening maybe provided through the pixel defining layer 175 to partially expose thefirst electrode 170 a.

An organic light emitting layer 180 of the organic light emittingstructure may be disposed on the exposed first electrode 170 a throughthe pixel opening of the pixel defining layer 175. In exemplaryembodiments, the organic light emitting layer 180 may have amulti-layered configuration that includes an organic light emittinglayer (EL), a hole injection layer (HIL), a hole transfer layer (HTL),an electron transfer layer (ETL), an electron injection layer (EIL),etc. The organic light emitting layer 180 may include a light emittingmaterial for generating a red color of light, a green color of light ora blue color of light in accordance with the pixels of the organic lightemitting display device 100. Alternatively, the organic light emittinglayer 180 may include a plurality of materials for generating a redcolor of light, a green color of light and/or a blue color of light,thereby finally emitting a white color of light.

The second electrode 185 may be disposed on the pixel defining layer 175and the organic light emitting layer 180. The second electrode 185 mayinclude a material having a transmittance or a reflectivity inaccordance with the type of the organic light emitting display device100. Although it is not illustrated in FIG. 1, an additional substrate,an encapsulation substrate and/or a window may be disposed on the secondelectrode 185. For example, the additional substrate may include a glasssubstrate, a quartz substrate, a transparent resin substrate, etc.

As described above, the organic light emitting structure, the firstsemiconductor device and the second semiconductor device may bepositioned in the pixel region of the organic light emitting displaydevice 100. The capacitor CAP may be provided in the transparent regionof the organic light emitting display device 100.

In the conventional organic light emitting display device, all of thesemiconductor device and the capacitor are disposed on the substrate inthe pixel region, so that the capacitance of the capacitor for theelements of the conventional organic light emitting display device maynot be sufficiently ensured due to the limited size of the pixel region.According to exemplary embodiments of the inventive concept, when eachof the lower electrode 140 b and the upper electrode 170 b includes thematerial having the transmittance, the transmittance of the organiclight emitting display device 100 may not be substantially decreasedeven though the capacitor CAP is positioned in the transparent region.Moreover, the capacitor CAP may ensure a sufficient capacitance for theelements of the organic light emitting display device 100 withoutincreasing the area of the pixel region. For example, the capacitor CAPof the exemplary embodiments may have an increased capacitance largerthan that of the conventional capacitor by about 1.5 times. According tosome exemplary embodiments, the transparent region of the organic lightemitting display device 100 may serve as a mirror device when the lowerelectrode 140 b and/or the upper electrode 170 b may include thematerial having the reflectivity.

FIG. 2 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments. An organiclight emitting display device 200 in FIG. 2, the same reference numeralsare used for elements substantially the same as those of the organiclight emitting display device 100 described with reference to FIG. 1,and detailed descriptions for those elements will be omitted.

Referring to FIG. 2, an insulation layer 265 may be disposed in thesecond insulating interlayer 150 to cover the first and the secondsource electrodes 155 a and 155 b and the first and the second drainelectrodes 160 a and 160 b. In exemplary embodiments, the insulationlayer 265 may have an opening 272 extending from the pixel region intothe transparent region of the organic light emitting display device 200.This opening 272 may expose the extended portion of the first sourceelectrode 155 a, a portion of a first electrode 270 a and an upperelectrode 270 b. The first electrode 270 a may extend onto the extendedportion of the first source electrode 155 a through one sidewall of theopening 272. Hence, the first electrode 270 a may contact the firstsource electrode 155 a. When the insulation layer 265 has the opening272 having a relatively large area without the second contact hole 167illustrated in FIG. 1, the transparent region of the organic lightemitting display device 200 may be enlarged by the area of the secondopening 167, so that the organic light emitting display device 200 mayhave a substantially increased transmittance.

As illustrated in FIG. 2, the first electrode 270 a may extend form theinsulation layer 265 in the pixel region onto the first source electrode155 a through one sidewall of the opening 272. The upper electrode 270 bmay extend from the insulation layer 265 in the transparent region ontothe second insulating interlayer 150 through another sidewall of theopening 272. The first electrode 270 a and the upper electrode 270 b maybe spaced apart from each other. The first contact hole 152 may bedisposed between the first electrode 270 a contacting the first sourceelectrode 155 a and the upper electrode 270 b.

In exemplary embodiments, each of the lower electrode 140 a and theupper electrode 270 b of the capacitor CAP may include a material havinga transmittance (e.g., a transparent conductive material), such that thecapacitor CAP may have sufficiently increased capacitance in thetransparent region without substantially reducing the transmittance ofthe organic light emitting display device 200. Furthermore, the opening272 having the relatively large area may be provided in the transparentregion, so that the organic light emitting display device 200 may havemore increased transmittance.

In some exemplary embodiments, the lower electrode 140 b and/or theupper electrode 270 b may include a material having a reflectivity. Inthis case, the transparent region of the organic light emitting displaydevice 200 may substantially function as a mirror, so that the organiclight emitting display device may serve as a mirror display device whileensuring the enhanced capacitance of the capacitor CAP.

FIG. 3 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments. An organiclight emitting display device 300 in FIG. 3, the same reference numeralsare used for elements substantially the same as those of the organiclight emitting display device 100 described with reference to FIG. 1.

Referring to FIG. 3, the second contact hole 167 may be provided throughthe insulation layer 165 in the pixel region of the organic lightemitting display device 300, and the opening 167 may be provided throughthe insulation layer 165 in the transparent region, as similar to thatof FIG. 1. The opening 167 may partially expose a second insulatinginterlayer 350, and the second contact hole 167 may expose an extendedportion of a first source electrode 355 a. The first source electrode355 a of the first semiconductor device may extend toward thetransparent region on the second insulating interlayer 350, and a firstelectrode 370 a of an organic light emitting structure may extend intothe second contact hole 167 to make contact with the first sourceelectrode 355 a.

In the organic light emitting display device illustrated in FIG. 3, thelower electrode 140 b of the capacitor CAP may not be connected to thefirst source electrode 355 a of the first semiconductor device. Further,an upper electrode 370 b of the capacitor CAP may be integrally formedwith the first electrode 370 a of the organic light emitting structure.The upper electrode 370 b and the first electrode 370 a may be formed ofthe same material and in the same plane. Thus, it is not required anetching process for separating the first electrode 370 a and the upperelectrode 370 b. For example, the upper electrode 370 b in thetransparent region may be positioned on a sidewall of the opening 169,the second insulating interlayer 350 and the insulation layer 165. Thefirst electrode 370 a in the pixel region may be located on the asidewall of the second contact hole 167, the first source electrode 355a and the insulation layer 165. Accordingly, the organic light emittingdisplay device 300 in FIG. 3 may have a configuration substantiallysimpler than that of the organic light emitting display device 100 or200 in FIG. 1 or FIG. 2.

FIGS. 4 to 11 are cross sectional views illustrating a method formanufacturing an organic light emitting display device in accordancewith exemplary embodiments. The method illustrated in FIGS. 4 to 11 mayprovide an organic light emitting display device having a configurationsubstantially the same as or similar to that of the organic lightemitting display device described with reference to FIG. 1, however, theorganic light emitting display device 200 or 300 illustrated in FIG. 2or FIG. 3 may be manufactured by obviously modifying some processes suchas a deposition process, an etching process, etc of the methodillustrated in FIGS. 4 to 11.

Referring to FIG. 4, a first buffer layer 410 and a second buffer layer415 may be sequentially formed on a substrate 405. For example, thesubstrate 405 may include a glass substrate, a transparent plasticsubstrate, a transparent metal oxide substrate, etc. The first and thesecond buffer layers 410 and 415 may prevent the diffusion of metalatoms and/or impurities from the substrate 405, and also may improve thesurface flatness of the substrate 405. The first buffer layer 410 may beformed of a material different from that of the second buffer layer 415.For example, the first buffer layer 410 may be formed of silicon nitridewhile the second buffer layer 415 may be formed of silicon oxide.Alternatively, the first and the second buffer layers 410 and 415 may beformed of the same material. Further, a process for forming the firstbuffer layer 410 and/or a process for forming the second buffer layer415 may be omitted in accordance with the material and/or the surfacecondition of the substrate 405.

Referring to FIG. 5, after an active layer (not illustrated) may beformed on the second buffer layer 415, the active layer may be patternedto obtain a first active pattern 420 a of a first semiconductor deviceand a second active pattern 420 b of a second semiconductor device. Forexample, the active layer may be formed using a material containingsilicon or oxide semiconductor. The first and the second active patterns420 a and 420 b may be separated from each other on the second bufferlayer 415.

A first gate insulation layer 425 may be formed on the second bufferlayer 415 to cover the first and the second active patterns 420 a and420 b. For example, the first gate insulation layer 425 may be formed ofsilicon compound, metal oxide, etc.

Referring to FIG. 6, a second gate electrode 430 of a secondsemiconductor device may be formed on the first gate insulation layer425. For example, the second gate electrode 430 may be formed of metal,alloy, metal nitride, conductive metal oxide, transparent conductivematerial, etc. The second gate electrode 430 may be located over thesecond active pattern 420 b.

A second gate insulation layer 435 may be formed on the first gateinsulation layer 425 to cover the second gate electrode 430. The secondgate insulation layer 435 may be formed of silicon compound, metaloxide, etc.

Referring to FIG. 7, a conductive layer (not illustrated) may be formedon the second gate insulation layer 435, and then the conductive layermay be patterned to obtain a first gate electrode 440 a of the firstsemiconductor device and a lower electrode 440 b of a capacitor CAP (seeFIG. 10). The conductive layer may be formed of a material having atransmittance or a reflectivity.

In exemplary embodiments, the first gate electrode 440 a and the lowerelectrode 440 b may be simultaneously formed using an etching processusing one mask. The first gate electrode 440 a may be formed in thepixel region of the organic light emitting display device, and the lowerelectrode 440 b may be formed in the transparent region of the organiclight emitting display device. The first gate electrode 440 a may bedisposed over the first active pattern 420 a.

Referring to FIG. 8, a first insulating interlayer 445 may be formed onthe second gate insulation layer 435 to cover the first gate electrode440 a and the lower electrode 440 b. The first insulating interlayer 445may have a substantially planar surface. For example, the firstinsulating interlayer 445 may be formed using silicon oxide, siliconnitride, silicon oxy-nitride, silicon oxy-carbide, silicon carbonnitride, etc.

Referring to FIG. 9, a second insulating interlayer 450 may be formed onthe first insulating interlayer 445. For example, the second insulatinginterlayer 450 may be formed of silicon oxide, silicon nitride, siliconoxy-nitride, silicon oxy-carbide, silicon carbon nitride, etc.

The first and the second insulating interlayers 445 and 450 may bepartially removed in the transparent region, so that a first contacthole 452 partially exposing the lower electrode 440 b may be formedthrough the first and the second insulating interlayers 445 and 450. Inthe pixel region, the first and the second insulating interlayers 445and 450 and the first and the second gate insulation layers 425 and 435may be partially removed to form via holes partially exposing the firstand the second active patterns 420 a and 420 b. These via holes mayexpose source and drain regions of the first and the second activepatterns 420 a and 420 b.

After an additional conductive layer (not illustrated) may be formed onthe second insulating interlayer 450 to fill the via holes, theadditional conductive layer may be patterned to obtain a first sourceelectrode 455 a, a first drain electrode 460 a, a second sourceelectrode 455 b and a second drain electrode 460 b. Hence, there isprovided the first semiconductor device that includes the first activepattern 420 a, the first gate insulation layer 425, the second gateinsulation layer 435, the first gate electrode 440 a, the first sourceelectrode 455 a and the first drain electrode 460 a. Additionally, thesecond semiconductor device including the second active pattern 420 b,the first gate insulation layer 425, the second gate electrode 430, thesecond source electrode 455 b and the second drain electrode 460 b maybe provided on the substrate 405. The additional conductive layer may beformed using transparent conductive material, metal, alloy, etc. Thefirst source and drain electrodes 455 a and 460 a may contact the sourceand the drain regions of the first active pattern 420 a, and the secondsource and drain electrodes 455 b and 460 b may contact the source andthe drain regions of the second active pattern 420 b.

In exemplary embodiments, the first source electrode 455 a may extendinto the transparent region to make contact with the lower electrode 440b of the capacitor CAP. Specifically, the first source electrode 455 amay extend onto the second insulating interlayer 450 and a sidewall ofthe first contact hole 452, and an extended portion of the first sourceelectrode 455 a may make contact with the lower electrode 440 b in thetransparent region.

Referring to FIG. 10, an insulation layer 465 may be formed on thesecond insulating interlayer 450 to cover the first and the secondsource electrodes 455 a and 455 b and the first and the second drainelectrodes 460 a and 460 b. For example, the insulation layer 465 may beformed using photoresist, acryl-based resin, polyamide-based resin,polyimide-based resin, siloxane-based resin, etc. The insulation layer465 may have a substantially planar surface for ease of formingoverlying structures subsequently formed.

The insulation layer 465 may be partially removed in the pixel region,so that a second contact hole 467 exposing the extended portion of thefirst source electrode 455 a may be formed through the insulation layer465. At the same time, an opening 469 may be formed through theinsulation layer 465 in the transparent region to partially expose thesecond insulating interlayer 450. The opening 469 in the transparentregion may have an area substantially larger than that of the secondcontact hole 467 in the pixel region.

After an electrode layer (not illustrated) may be formed on theinsulation layer 465, a bottom of the opening 469 and a sidewall of theopening 469 to fill the second contact hole 467, the electrode layer maybe patterned to form a first electrode 470 a of an organic lightemitting structure and an upper electrode 470 b of the capacitor CAP.For example, the electrode layer may be formed of a material having atransmittance or a reflectivity. In the pixel region, the firstelectrode 470 a may be formed on the extended portion of the firstsource electrode 455 a, a sidewall of the second contact hole 467 andthe insulation layer 465. In the transparent region, the upper electrode470 b may be formed on the exposed second insulating interlayer 450, thesidewall of the opening 469 and the insulation layer 465.

In accordance with the formation of the upper electrode 470 b, thecapacitor CAP may be provided the transparent region. The capacitor CAPmay include the lower electrode 440 b, a dielectric structure havingportions of the first and the second insulating interlayers 445 and 450,and the upper electrode 470 b.

Referring to FIG. 11, a pixel defining layer 475 may be formed on theinsulation layer 465 to cover the first electrode 470 a and the upperelectrode 470 b. For example, the pixel defining layer 475 may be formedof photoresist, polyamide-based resin, polyimide-based resin,acryl-based resin, silicon compound, etc.

The pixel defining layer 475 may be partially removed to form a pixelopening that exposes a portion of the first electrode 470 a. This pixelopening may be formed in the pixel region only.

An organic light emitting layer 480 may be formed on the portion of thefirst electrode 470 a exposed by the pixel opening. The organic lightemitting layer 480 may be obtained by sequentially stacking a holeinjection layer (HIL), a hole transfer layer (HTL), an organic lightemitting layer (EL), an electron transfer layer (ETL), an electroninjection layer (EIL), etc on the exposed first electrode 470 a. Theorganic light emitting layer 480 may be formed of a light emittingmaterial for generating a red color of light, a green color of light ora blue color of light in accordance with the pixels of the organic lightemitting display device. Alternatively, the organic light emitting layer480 may be formed by stacking a plurality of materials for generating ared color of light, a green color of light and/or a blue color of light,thereby finally emitting a white color of light.

A second electrode 485 may be formed on the pixel defining layer 475 andthe organic light emitting layer 480. For example, the second electrode485 may be formed of a material having a transmittance or areflectivity. Although it is not illustrated, an additional substrate,an encapsulation substrate and/or a window may be formed on the secondelectrode 485.

FIG. 12 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments.

Referring to FIG. 12, an organic light emitting display device 500 mayinclude a substrate 505, a first semiconductor device, a secondsemiconductor device, a first capacitor CAP1, an additional secondcapacitor CAP2, an organic light emitting structure, etc. In exemplaryembodiments, the first capacitor CAP1 may be positioned in a transparentregion of the organic light emitting display device 500, while theadditional second capacitor CAP2 may be located in a pixel region of theorganic light emitting display device 500. The organic light emittingstructure may include a first electrode 570 a, an organic light emittinglayer 580 and a second electrode 585. Further, the first and the secondsemiconductor devices and the organic light emitting structure may bedisposed in the pixel region.

The substrate 505 may include a transparent insulation substrate. Thesubstrate 505 may also have the pixel and the transparent regions inaccordance with the organic light emitting display device 500. A firstbuffer layer 510 and a second buffer layer 515 may be disposed on thesubstrate 505. Alternatively, the first buffer layer 510 and/or thesecond buffer layer 515 may be omitted the type and/or the material ofthe substrate 505.

The first and the second semiconductor devices may be disposed on thesecond buffer layer 515 in the pixel region. The first and the secondsemiconductor devices may include a first active pattern 520 a and asecond active pattern 520 b, respectively. Each of the first and thesecond active patterns 520 a and 520 b may include material containingsilicon or oxide semiconductor.

The first semiconductor device may include the first active pattern 520a, a first gate insulation layer 525, a second gate insulation layer530, a first gate electrode 535 a, a first source electrode 555 a and afirst drain electrode 560 a. The second semiconductor device may includethe second active pattern 520 b, the first gate insulation layer 525,the second gate insulation layer 530, a second gate electrode 535 c, asecond source electrode 555 b and a second drain electrode 560 b. Inthis case, the first gate electrode 535 a of the first semiconductordevice may be located at a level over the substrate 505 substantiallythe same as that of the second gate electrode 535 c of the secondsemiconductor device.

The first and the second active patterns 520 a and 520 b may bepositioned on the second buffer layer 515, and the first gate insulationlayer 525 may be disposed on the second buffer layer 515 to overlap thefirst and the second active patterns 520 a and 520 b. The second gateinsulation layer 530 may be located on the first gate insulation layer525. In some exemplary embodiments, the second gate insulation layer 530may be omitted according to the material and/or the dimensions of thefirst gate insulation layer 525.

The first and the second gate electrodes 535 a and 535 c may be disposedon the second gate insulation layer 530 in the pixel region. In thetransparent region, a first lower electrode 535 b of the first capacitorCAP1 may be positioned on the second gate insulation layer 530. Each ofthe lower electrode 535 b and first and the second gate electrodes 535 aand 535 c may include a material having a transmittance, asemi-transparent material or a material having a reflectivity. Further,the first capacitor CAP1 may have a first dielectric structure and afirst upper electrode 570 b. The first dielectric structure of the firstcapacitor CAP1 may include a first insulating interlayer 540 and asecond insulating interlayer 550 in the transparent region.

The first insulating interlayer 540 may be disposed on the second gateinsulation layer 530 to cover the first gate electrode 535 a, the secondgate electrode 535 c and the first lower electrode 535 b. In the pixelregion, a second upper electrode 545 of the second capacitor CAP2 may bedisposed on the first insulating interlayer 540. Here, the second upperelectrode 545 may be generally referred to as an additional gateelectrode. In exemplary embodiments, the additional second capacitorCAP2 may include the second upper electrode 545, a second dielectricstructure and a second lower electrode. In this case, the seconddielectric structure may be a portion of the first insulating interlayer540 in the pixel region, and the second lower electrode may be the firstgate electrode 535 a of the first semiconductor device. In other words,the organic light emitting display device 500 may have a configurationin which the first semiconductor device and the additional capacitorCAP2 are substantially vertically stacked in the pixel region. Forexample, the first semiconductor device and the additional capacitorCAP2 may share the first gate electrode 535 a so that the additionalcapacitor CAP2 may overlap with the first semiconductor device. When theorganic light emitting display device 500 includes the additionalcapacitor CAP2, more sufficient capacitance may be provided for thefirst and the second semiconductor devices, the organic light emittingstructure, other wrings, etc.

In exemplary embodiments, the first gate electrode 535 a of the firstsemiconductor device (i.e., the second lower electrode of the additionalcapacitor CAP2), the second gate electrode 535 c of the secondsemiconductor device and the first lower electrode 535 b of the firstcapacitor CAP1 may be located at the substantially same level over thesubstrate 505. Further, the first upper electrode 570 b of the firstcapacitor CAP1 and the second upper electrode 545 of the additionalcapacitor CAP2 may be positioned respectively at different levels overthe substrate 505.

As described above, the additional capacitor CAP2 may be provided on thefirst semiconductor device such that the organic light emitting displaydevice 500 including the additional capacitor CAP2 may have an improvedintegration degree without increasing the area of the pixel region.Furthermore, the first and the additional capacitors CAP1 and CAP2 mayprovide more sufficient capacitances for the elements of the organiclight emitting display device 500.

Referring now to FIG. 12, the second insulating interlayer 550 may bedisposed on the first insulating interlayer 540 to cover the secondupper electrode 545. The first source electrode 555 a and the firstdrain electrode 560 a may make contact with a first source region and afirst drain region of the first active pattern 520 a through the secondinsulating interlayer 550, the first insulating interlayer 540, thesecond gate insulation layer 530 and the first gate insulation layer525. Similarly, the second source electrode 555 b and the second drainelectrode 560 b may make contact with a second source region and asecond drain region of the second active pattern 520 b through thesecond insulating interlayer 550, the first insulating interlayer 540,the second gate insulation layer 530 and the first gate insulation layer525. Each of these electrodes 555 a, 560 a, 555 b and 560 b may includea material having a transmittance or a reflectivity.

The first source electrode 555 a may extend into the transparent region.In the transparent region, the first and the second insulatinginterlayer 540 and 550 may have a first contact hole 552 that partiallyexposes the first lower electrode 535 b. The first source electrode 555a may extend into the first contact hole 552 to thereby make contactwith the first lower electrode 535 b.

An insulation layer 565 may be disposed on the second insulatinginterlayer 550 to cover the first source and drain electrodes 555 a and560 a and the second source and drain electrodes 555 b and 560 b. Theinsulation layer 565 may have a second contact hole 567 exposing anextended portion of the first source electrode 555 a in the pixelregion. Further, the insulation layer 565 may have an opening 569exposing the second insulating interlayer 550 in the transparent region.The insulation layer 565 may include an organic material or an inorganicmaterial, and may have a substantially planar upper face.

As illustrated in FIG. 12, the first electrode 570 a and the first upperelectrode 570 b may be disposed on the insulation layer 565. The firstelectrode 570 a may be located on the insulation layer 565, a sidewallof the second contact hole 567 and the exposed first source electrode555 a. The first upper electrode 570 b may be positioned on theinsulation layer 565 and the exposed second insulating interlayer 550.Each of the first electrode 570 a and the first upper electrode 570 bmay include a material having a transmittance or a material having areflectivity.

A pixel defining layer 575 may be disposed on the insulation layer 565,the first electrode 570 a and the first upper electrode 570 b. In thepixel region, the pixel defining layer 575 may have a pixel openingexposing a portion of the first electrode 570 a. The organic lightemitting layer 580 may be disposed on the exposed portion of the firstelectrode 570 a in the pixel opening. The organic light emitting layer580 may include a material for generating a red color of light, a greencolor of light or a blue color of light. Alternatively, the organiclight emitting layer 580 may include a plurality of stacked materialsfor generating a white color of light.

The second electrode 585 may be disposed on the pixel defining layer 575and the organic light emitting layer 580. The second electrode 585 mayinclude a transparent material or a reflective material in accordancewith the type of the organic light emitting display device 500. Atransparent substrate, an encapsulation substrate and/or a window may beprovided on the second electrode 585.

The organic light emitting display device 500 according to exemplaryembodiments may include the first capacitor CAP1 in the transparentregion and the additional capacitor CAP2 in the pixel region.Accordingly, these capacitors CAP1 and CAP2 may have more sufficientlycapacitances for the first and the second semiconductor devices, theorganic light emitting structure and other elements such as wirings.Further, the organic light emitting display device 500 may have anenhanced integration degree without increasing the area of the pixelregion. Furthermore, when the first lower electrode 535 b and/or thefirst upper electrode 570 b may include a reflective material, thetransparent region of the organic light emitting display device 500 mayserve as a mirror.

FIG. 13 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments. In anorganic light emitting display device 600 in FIG. 13, the same referencenumerals are used for elements substantially the same as those of theorganic light emitting display device 500 described with reference toFIG. 12.

Referring to FIG. 13, an insulation layer 665 may have an opening 672that exposes an extended portion of a first source electrode 555 a andthe second insulating interlayer 550. The opening 672 of the insulationlayer 665 may extend from the transparent region of the organic lightemitting display device 600 to a portion of the pixel region. Since theorganic light emitting display device 600 may include the opening 672having a relatively large area without the second contact hole 567illustrated in FIG. 12, the organic light emitting display device 600may have a simple configuration. Further, the organic light emittingdisplay device 600 may have a more increased transmittance when theinsulation layer 665 includes the relatively large opening 672 in thetransparent region.

A first electrode 670 a of the organic light emitting structure may bedisposed on one sidewall of the opening 672, the insulation layer 665and an exposed portion of the first source electrode 555 a in the pixelregion. The first upper electrode 670 b of a first capacitor CAP1 may bepositioned on another sidewall of the opening 672, the insulation layer665 and the second insulating interlayer 550 in the transparent region.The first electrode 670 a and the first upper electrode 670 a may beseparated from each other. The first contact hole 552 where the firstsource electrode 555 a contacts the first lower electrode 535 b may bedisposed between the first electrode 670 a and the first upper electrode670 b. As described above, the first capacitor CAP1, which may belocated in the transparent region, may include the first lower electrode535 b, the first dielectric structure (i.e., the portions of the firstand the second insulating interlayers 540 and 550), and the first upperelectrode 670 b. The additional capacitor CAP2, which may be positionedin the pixel region, may include a second lower electrode (i.e., thefirst gate electrode 535 a of the first semiconductor device), thesecond dielectric structure (i.e., the portion of the first insulatinginterlayer 540), and the second upper electrode 545.

FIG. 14 is a cross sectional view illustrating an organic light emittingdisplay device in accordance with some exemplary embodiments. In anorganic light emitting display device 700 in FIG. 14, the same referencenumerals are used for elements substantially the same as those of theorganic light emitting display device 500 described with reference toFIG. 12.

Referring to FIG. 14, a first insulating interlayer 740 may be disposedon the second gate insulation layer 530 to cover the first gateelectrode 535 a of the first semiconductor device, the first lowerelectrode 535 b of the first capacitor CAP1, and the second gateelectrode 535 c of the second semiconductor device. The second upperelectrode 545 of the additional capacitor CAP2 may be positioned on thefirst insulating interlayer 740 corresponding to the first gateelectrode 535 a. The additional capacitor CAP2 may include the secondlower electrode (i.e., the first gate electrode 535 a), the seconddielectric structure (i.e., a portion of the first insulating interlayer740), and the second upper electrode 545.

A second insulating interlayer 750 may be disposed on the firstinsulating interlayer 740 to cover the second upper electrode 545. Thefirst capacitor CAP1 may include, as described above, the first lowerelectrode 535 b, a first dielectric structure (i.e., portions of thefirst and the second insulating interlayers 740 and 750), and a firstupper electrode 770 b in the transparent region.

The first source and drain electrodes 555 a and 560 a may make contactwith the first source and drain regions of the first active pattern 520a, respectively, through the second insulating interlayer 750, the firstinsulating interlayer 740, the second gate insulation layer 530 and thefirst gate insulation layer 525. Additionally, the second source anddrain electrodes 555 b and 560 b may make contact with the second sourceand drain regions of the second active pattern 520 b, respectively,through the second insulating interlayer 750, the first insulatinginterlayer 740, the second gate insulation layer 530 and the first gateinsulation layer 525. The first source electrode 755 a may extend on thesecond insulating interlayer 750 toward the transparent region.

The insulation layer 565 may be disposed on the second insulatinginterlayer 750 to cover the first source and drain electrodes 555 a and560 a and the second source and drain electrodes 555 b and 560 b. Theinsulation layer 565 may have a contact hole 567 exposing the extendedportion of the first source electrode 555 a in the pixel region, andalso may have the opening 569 exposing a portion of the secondinsulating interlayer 750 in the transparent region.

The first electrode 770 a of the organic light emitting structure andthe first upper electrode 770 b of the first capacitor CAP1 may bedisposed on the insulation layer 565. In exemplary embodiments, thefirst electrode 770 a may be integrally formed with the first upperelectrode 770 b. The first electrode 770 a and the first upper electrode770 b may be formed of the same material and in the same plane. Thefirst upper electrode 770 b in the transparent region may be positionedon the sidewall of the opening 569, the exposed portion of the secondinsulating interlayer 750 and the insulation layer 565. The firstelectrode 770 a in the pixel region may be located on the sidewall ofthe contact hole 567, the exposed portion of the first source electrode555 a and the insulation layer 565. In the organic light emittingdisplay device 700 illustrated in FIG. 14, the first contact hole 552for connecting the first source electrode 555 a and the first lowerelectrode 535 b may not be provided and the first electrode 770 a may beintegrally formed with the first upper electrode 770 b, so the organiclight emitting display device 700 may have a simple configurationmanufactured through simplified processes.

FIGS. 15 to 21 are cross sectional views illustrating a method formanufacturing an organic light emitting display device in accordancewith some exemplary embodiments. The method illustrated in FIGS. 15 to21 may provide an organic light emitting display device having aconfiguration substantially the same as or similar to that of theorganic light emitting display device described 500 with reference toFIG. 12, however, the organic light emitting display device 600 or 700illustrated in FIG. 13 or FIG. 14 may be manufactured by obviouslymodifying some processes such as a deposition process, an etchingprocess, etc of the method illustrated in FIGS. 15 to 21.

Referring to FIG. 15, a first buffer layer 810 and a second buffer layer815 may be formed on a substrate 805 containing a transparent insulationmaterial. Alternatively, a process for forming the first buffer layer810 and/or a process for forming the second buffer layer 815 may beomitted in accordance with the ingredients of the substrate 805, thesurface condition of the substrate 805, etc.

Referring to FIG. 16, a first active pattern 820 a and a second activepattern 820 b may be formed on the second buffer layer 815. Each of thefirst and the second active patterns 820 a and 820 b may be formed of amaterial containing silicon or oxide semiconductor. A first gateinsulation layer 825 may be formed on the second buffer layer 815 tocover the first and the second active patterns 820 a and 820 b. A secondgate insulation layer 830 may be formed on the first gate insulationlayer 825. Alternatively, a process for forming the first gateinsulation layer 825 or a process for forming the second gate insulationlayer 830 may be omitted.

Referring to FIG. 17, a conductive layer (not illustrated) may be formedon the second gate insulation layer 830, and then the conductive layermay be patterned to form a first gate electrode 835 a, a secondelectrode 835 c and a first lower electrode 835 b. The conductive layermay be formed of a transparent material, a reflective material or asemi-transparent material. The first gate electrode 835 a, the firstlower electrode 835 b and the second gate electrode 835 c may beobtained by an etching process using one etching mask. The first and thesecond electrodes 835 a and 835 c may be formed in a pixel region of theorganic light emitting display device, and the first lower electrode 835b may be formed in a transparent region of the organic light emittingdisplay device. A first insulating interlayer 840 may be formed on thesecond gate insulation layer 830 to cover the first and the secondelectrodes 835 a and 835 c and the first lower electrode 835 b.

Referring to FIG. 18, a second upper electrode 845 may be formed on thefirst insulating interlayer 840. The second upper electrode 845 may belocated on an area corresponding to the first gate electrode 835 a, sothat an additional capacitor CAP2 may be formed in the pixel region. Theadditional capacitor CAP2 may include the second upped electrode 845, asecond dielectric structure (i.e., a portion of the first insulatinginterlayer 840) and a second lower electrode (i.e., the first gateelectrode 835 a of a first semiconductor device). A second insulatinginterlayer 850 may be formed on the first insulating interlayer 840 tocover the second upper electrode 845.

Referring to FIG. 19, the second insulating interlayer 850, the firstinsulating interlayer 840, the second gate insulation layer 830 and thefirst gate insulation layer 825 may be partially removed to form viaholes that expose portions of the first and the second active patterns820 a and 820 b, respectively. The via holes may expose a first sourceregion and a first drain region of the first active pattern 820 a, and asecond source region and a second drain region of the second activepattern 820 b. A first source electrode 855 a, a first drain electrode860 a, a second source electrode 855 b and a second drain electrode 860b may be formed on the second insulating interlayer 850 to fill the viaholes. The first source and drain electrodes 855 a and 860 a may contactrespectively the first source and drain regions of the first activepattern 820 a, and the second source and drain electrodes 855 b and 860b may contact the second source and drain regions of the second activepattern 820 b.

In the transparent region, the second insulating interlayer 850 and thefirst insulating interlayer 840 may be partially removed to form a firstcontact hole 852 exposing a portion of the lower electrode 835 b. Forexample, the via holes and the first contact hole 852 may besimultaneously formed by one etching process. The first source electrode855 a may extend onto the second insulating interlayer 850 and asidewall of the first contact hole 852, so that the first sourceelectrode 855 a may make contact with the first lower electrode 835 b.

Referring to FIG. 20, an insulation layer 855 may be formed on thesecond insulating interlayer 850 to fill the first contact hole 852. Theinsulation layer 855 may cover the first source and drain electrodes 855a and 860 a, and the second source and drain electrodes 855 b and 860 b.The insulation layer 865 may have a substantially planar surface forease of forming of overlying structures. For example, the insulationlayer 865 may be formed of an organic material or an inorganic material.

The insulation layer 865 may be partially etched to form a secondcontact hole 867 and an opening 869. The second contact hole 867 mayexpose the extended portion of the first source electrode 855 a. Theopening 869 may expose a portion of the second insulating interlayer850. The second contact hole 867 and the opening 869 may besimultaneously formed in the pixel region and in the transparent region,respectively.

An electrode layer (not illustrated) may be formed on the insulationlayer 865, the exposed second insulating interlayer 850 and the exposedportion of first source electrode 855 a. The electrode layer may bepatterned to form a first electrode 870 a of an organic light emittingstructure and a first upper electrode 870 b of the first capacitor CAP1.In the pixel region, the first electrode 870 a may be formed on theinsulation layer 865, a sidewall of the second contact hole 867 and theextended portion of the first source electrode 855 a. In the transparentregion, the first upper electrode 870 b may be formed on the insulationlayer 865, a sidewall of the opening 869 and the exposed secondinsulating interlayer 850. For example, the electrode layer may beformed of a material having a transmittance or a material having areflectivity.

Referring to FIG. 21, a pixel defining layer 875 may be formed on thefirst electrode 870 a, the first upper electrode 870 b and theinsulation layer 865 to fill the opening 869 and the second contact hole867. The pixel defining layer 875 may be formed of an organic materialor an inorganic material to have a substantially planar surface.

In the pixel region, the pixel defining layer 875 may be partiallyremoved to form a pixel opening that exposes a portion of the firstelectrode 870 a. An organic light emitting layer 880 may be formed onthe exposed portion of the first electrode 870 a in the pixel opening. Asecond electrode 885 may be formed on the pixel defining layer 875, asidewall of the pixel opening and the organic light emitting layer 880.An additional substrate, an encapsulation substrate and/or a window maybe formed on the second electrode 885.

According to exemplary embodiments of the inventive concept, a capacitormay be provided on a transparent region of an organic light emittingdisplay device so that a sufficient capacitance for elements of theorganic light emitting display device may be ensured withoutsubstantially reducing a transmittance of the organic light emittingdisplay device. Additionally, the transparent region of the organiclight emitting display device may serve as a mirror in accordance withthe material included in a lower electrode of the capacitor and/or anupper electrode of the capacitor. Furthermore, the organic lightemitting display device may include an additional capacitor in the pixelregion such that the organic light emitting display device may have moresufficient capacitance of the element thereof without increasing an areaof the pixel region.

The foregoing is illustrative of exemplary embodiments and is not to beconstrued as limiting the scope of the inventive concept. Although a fewexemplary embodiments have been described, those skilled in the art willreadily appreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of the present inventive concept. Accordingly, all suchmodifications are intended to be included within the scope of thepresent inventive concept as defined in the claims. Therefore, it is tobe understood that the foregoing is illustrative of various exemplaryembodiments and is not to be construed as limited to the specificexemplary embodiments disclosed, and that modifications to the disclosedexemplary embodiments, as well as other exemplary embodiments, areintended to be included within the scope of the appended claims.

What is claimed is:
 1. An organic light emitting display device having apixel region and a transparent region, which comprises: a substrate; atleast one semiconductor device disposed on the substrate in the pixelregion; an organic light emitting structure disposed on the at least onesemiconductor device; and a capacitor disposed on the substrate in thetransparent region.
 2. The organic light emitting display device ofclaim 1, wherein the at least one semiconductor device comprises a firstsemiconductor device which includes a first active pattern disposed onthe substrate, a first gate insulation layer disposed on the firstactive pattern, a first gate electrode disposed on the first gateinsulation layer, a first source electrode contacting a first portion ofthe first active pattern and having an extended portion extending intothe transparent region, and a first drain electrode contacting a secondportion of the first active pattern.
 3. The organic light emittingdisplay device of claim 2, wherein the capacitor comprises a lowerelectrode contacting the extended portion of the first source electrode,a dielectric structure disposed on the lower electrode, and an upperelectrode disposed on the dielectric structure.
 4. The organic lightemitting display device of claim 3, wherein the lower electrode and thefirst gate electrode are disposed on a same plane and formed of a samematerial.
 5. The organic light emitting display device of claim 3,wherein each of the lower electrode and the upper electrode includes amaterial having a transmittance or a material having a reflectivity. 6.The organic light emitting display device of claim 3, wherein thedielectric structure includes a first insulating interlayer disposed onthe first gate electrode and the lower electrode, and a secondinsulating interlayer disposed on the first insulating interlayer. 7.The organic light emitting display device of claim 3, further comprisingan insulation layer disposed on the capacitor and the at least onesemiconductor device, wherein the organic light emitting structure ispositioned on the insulation layer, wherein the insulation layerincludes an opening exposing the dielectric structure in the transparentregion and a contact hole exposing the extended portion of the firstsource electrode in the pixel region.
 8. The organic light emittingdisplay device of claim 7, wherein the upper electrode is disposed onthe dielectric structure exposed by the opening, the insulation layerand a sidewall of the opening.
 9. The organic light emitting displaydevice of claim 7, wherein the organic light emitting structure includesa first electrode contacting the exposed portion of the first sourceelectrode through the contact hole, an organic light emitting layerdisposed on the first electrode, and a second electrode disposed on theorganic light emitting layer, and wherein the upper electrode isdisposed on a same plane and formed of a same material with the firstelectrode.
 10. The organic light emitting display device of claim 7,wherein the insulation layer has an opening exposing the exposed portionof the first source electrode and the dielectric structure.
 11. Theorganic light emitting display device of claim 10, wherein the upperelectrode is positioned on the insulation layer, one sidewall of theopening and the dielectric structure exposed by the opening.
 12. Theorganic light emitting display device of claim 3, wherein the at leastone semiconductor device comprises a second semiconductor device whichincludes a second active pattern disposed on the substrate, the firstgate insulation layer disposed on the second active pattern, a secondgate electrode disposed in the first gate insulation layer, a secondsource electrode contacting a first portion of the second activepattern, and a second drain electrode contacting a second portion of thesecond active pattern.
 13. The organic light emitting display device ofclaim 12, wherein the second gate electrode and the lower electrode arepositioned respectively at different levels over the substrate.
 14. Theorganic light emitting display device of claim 3, further comprising anadditional capacitor disposed in the pixel region.
 15. The organic lightemitting display device of claim 14, wherein the additional capacitor isdisposed on the first semiconductor device.
 16. The organic lightemitting display device of claim 15, wherein the additional capacitorincludes a lower electrode being the first gate electrode, a dielectricstructure disposed on the first gate electrode, and an upper electrodedisposed on the dielectric structure.
 17. The organic light emittingdisplay device of claim 16, wherein the dielectric structure of theadditional capacitor includes an insulating interlayer disposed on thefirst gate electrode.
 18. The organic light emitting display device ofclaim 2, wherein the capacitor comprises a lower electrode, a dielectricstructure disposed on the lower electrode, and an upper electrodedisposed on the dielectric structure and contacting the extended portionof the first source electrode.
 19. The organic light emitting displaydevice of claim 18, wherein the upper electrode is formed of a samematerial with an electrode of the organic light emitting structure. 20.The organic light emitting display device of claim 19, furthercomprising an additional capacitor disposed in the pixel region, whereinthe additional capacitor is disposed on the first semiconductor device,wherein the additional capacitor includes a lower electrode being thefirst gate electrode, a dielectric structure disposed on the first gateelectrode, and an upper electrode disposed on the dielectric structure,and wherein the dielectric structure of the additional capacitorincludes an insulating interlayer disposed on the first gate electrode.